Analysed  Modulation Doped Fieled Effect Transister (MODFET) and Metal Oxide Semiconductor Modulation Doped Fieled Effect Transister ((MOS-MODFET)) using compound material silicon Germanium (SiGe)

Abstract: In this paper SiGe material incorporated to design Modulation Doped Fieled Effect Transister (MODFET) and analysed theoretically. The SiGe is a compound semiconductor material and impurity material is P-type. The Gate length of MOS-MODFET is fabricated 0.1μm. The SiGe/Si Heterojunction grown by ultrahigh vacuum chemical vapor deposition technique. The performance of modulation-doped field effect transistor is a new approached to design FET with heterojunction field effect transistor (HBT). The performance of MOS-MODFET is also a good approached to design device as CMOS with the HBT. The characteristics shown is improved the speed and power consumption with BJT and MOSFET.

Keywords: Modulation doping , MODFET, MOS-MODFET, and Characteristics