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International Journal of Advanced Research in Computer and Communication Engineering
International Journal of Advanced Research in Computer and Communication Engineering A monthly Peer-reviewed & Refereed journal
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Analysed  Modulation Doped Fieled Effect Transister (MODFET) and Metal Oxide Semiconductor Modulation Doped Fieled Effect Transister ((MOS-MODFET)) using compound material silicon Germanium (SiGe)

KAMAL PRAKASH PANDEY, RAKESH KUMAR SINGH, ANIL KUMAR Associate Professor, Deptt. of ECE, SIET, Jhalwa, Allahabad, India Assistant Professor, Deptt. of ECE, SIET, Jhalwa, Allahabad, India Assistant Professor, Deptt. of ECE, SHIATS-DU, Allahabad, India  

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[1] KAMAL PRAKASH PANDEY, RAKESH KUMAR SINGH, ANIL KUMAR Associate Professor, Deptt. of ECE, SIET, Jhalwa, Allahabad, India Assistant Professor, Deptt. of ECE, SIET, Jhalwa, Allahabad, India Assistant Professor, Deptt. of ECE, SHIATS-DU, Allahabad, India  , “Analysed  Modulation Doped Fieled Effect Transister (MODFET) and Metal Oxide Semiconductor Modulation Doped Fieled Effect Transister ((MOS-MODFET)) using compound material silicon Germanium (SiGe),” International Journal of Advanced Research in Computer and Communication Engineering (IJARCCE)

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