Design of Optical Patch Antenna on Photonic Crystal Substrate

Abstract: A mobility extraction method for Si MOSFETs, is presented. An accurate mobility extraction is obtained from the linear drain current by excluding the parasitic source/drain resistance and the parasitic gate capacitance Direct extraction of each parameter using a linear regression approach is performed by -parameter analysis on the proposed equivalent circuit of the MOSFET for high- frequency operation. The extracted results are physically meaningful and good agreement has been obtained between the simulation results of the equivalent circuit and measured data without any optimization. Also, the extracted parameters, such as and ds, match very well with those obtained by dc measurement.

Keywords: MOSFET, Structure, Mobility, Electric Field.