Abstract: In this paper, a low power ultra-high speedRipple Carry Adder is proposed by utilizing voltage scaling system for FinFET. A Ripple Carry Adder design is implemented in MOSFET 32nm and also in FinFET 32nm, performance is compared on the basis of Average power Consumption and Delay. A variation of Number of fins versus Average power is also calculated. Simulation results are obtained using Synopsys HSPICE software, and they show that dual mode Ripple Carry Adder technique is low power. Delay is also improved when FinFETs are used in the Ripple Carry Adder.
Keywords: Ripple Carry Adder, FinFET, 32nm.
| DOI: 10.17148/IJARCCE.2018.7521