Abstract:  In this paper, a varied range of adder circuits are designed in which NAND Gate, are designed using MOSFET in 90nm Technology length. Then, they are simulated using HSPICE and the performance parameters of NAND Gate such as average power, Leakage current and ground bounce is improved. A dual switch mode low power technique is applied on NAND Gate to improve all parameters.

Keywords: NAND, Dual Switch-Mode, 90nm.