Abstract: In this paper, we proposed the design of active inductor based tunable Low Noise Amplifier. The circuit consists of an efficient active inductor. The performance of LNA is validated by its S-Parameter analysis and Noise Figure (NF). In order to decrease the silicon area and to enhance the Quality factor (Q) of the LNA, the efficient active inductor is proposed and its performance is determined through post layout simulation using ADS tool. The designed active inductor based tunable LNA is operated in lower band frequency ranges from 3-5 GHz. The designed LNA operates at supply voltage of 1.2V. The proposed active inductor was designed by using a 180nm CMOS technology, which gives improved quality factor as high as 30 with a 7.9nH at 4GHz. The proposed LNA shows up to 47% improvement in gain and up to 43% improvement in Noise Figure. The proposed LNA shows better performance for S-parameter measurements.
Keywords: Ultra Wide Band (UWB), Noise Figure (NF), Low Noise Amplifier (LNA), Active Inductor (AI), Complementary Metal Oxide Semiconductor (CMOS)
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DOI:
10.17148/IJARCCE.2019.8532
