Abstract: In this paper, a varied range of XOR circuits are designed in which 6T XOR is proposed using CNTFET Technology are designed using MOSFET in 32nm Technology length. Then, they are simulated using HSPICE and the performance parameters of adders such as average power and delay are determined. The proposed circuit is compared with 12T CMOS XOR circuit which is conventional used and compared with CNTFET counterpart of the XOR gate. Simulation results show that the proposed XOR gate is better in performance.
Keywords: CNTFET, Nano tubes, XOR, 32nm, 6T XOR.
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DOI:
10.17148/IJARCCE.2018.7543
