Abstract: Memristors, as the fourth fundamental circuit element, have garnered significant attention for their potential applications in non-volatile memory, neuromorphic computing, and arithmetic logic circuits. This paper presents the design and implementation of an original memristor model in LTSpice XVII, focusing on its electrical characteristics, behavior under different stimuli, and potential integration into modern electronic circuits. The study involves modeling the memristor using its fundamental equations, simulating its resistance switching characteristics, and analyzing its hysteresis behavior under AC and DC excitations. The simulation results provide insights into the nonlinear dynamics and memory-dependent behavior of the memristor, highlighting its feasibility for use in next-generation computing systems. This research contributes to the understanding and practical realization of memristor-based circuits, paving the way for innovative applications in low-power and high-density memory and logic designs.
Index terms: Memristor, LTSpcie XVII ,Non-Volatile Memory,CMOS.
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DOI:
10.17148/IJARCCE.2025.14334
