Abstract: Recently, with the rapid growth of the demands in wireless communication products such as mobile phones and wireless network, low cost and high performance onchip radio-frequency devices are strongly needed. One important limitation in achieving higher levels of integration and further reduction of fabrication costs in the front-end of microwave transceivers is set by the difficulty of achieving high-Q on-chip inductors with smaller size. In the research work spiral inductors are simulated while achieving appreciable inductance and terminal voltage.
Keywords: On chip, silicon, FEM, inductor, spirals, terminal voltage.
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DOI:
10.17148/IJARCCE.2022.11909
