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International Journal of Advanced Research in Computer and Communication Engineering
International Journal of Advanced Research in Computer and Communication Engineering A monthly Peer-reviewed & Refereed journal
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Analytical Study Of Capacitance Extraction Of MOSFET

RAKESH KUMAR SINGH, KAMAL PRAKASH PANDEY, ABHISHEK KUMAR PANDEY, CHANDRABHAN, ANIL KUMAR Assistant Professor, Department of Electronics and Communication Engg, SIET, Allahabad, India Associate Professor, Department of Electronics and Comm. Engg., SIET, Allahabad, India Assistant Professor, Department of Computer Science and Engineering, SIET, Allahabad, India Associate Professor, Department of Electronics and Comm. Engg., SIET, Allahabad, India Assistant Professor, Department of Electronics and

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Abstract: Gate capacitance in PMOS is a key parameter for process development, material selection, and device modelling. This paper proposes and develops a extraction technique to overcome these shortcomings. Ids-Vgs and Ccx-Vgs are simultaneously measured so that the effect of Vd on mobility is inherently taken into account, and the measured mobility becomes Vds independent. This allows the measurement time reducing to the order of microseconds and, in turn, minimizing the effect of charge trapping. Unlike the standard high-frequency Cox-Vgs, Cox is independent of gate leakage. This advantages, together with its easy implementation, should make this technique a simple tools for process development, material selection, and device modelling in future generations of CMOS technology.

Keywords: Mobility, MOSFET, split C-V technique

How to Cite:

[1] RAKESH KUMAR SINGH, KAMAL PRAKASH PANDEY, ABHISHEK KUMAR PANDEY, CHANDRABHAN, ANIL KUMAR Assistant Professor, Department of Electronics and Communication Engg, SIET, Allahabad, India Associate Professor, Department of Electronics and Comm. Engg., SIET, Allahabad, India Assistant Professor, Department of Computer Science and Engineering, SIET, Allahabad, India Associate Professor, Department of Electronics and Comm. Engg., SIET, Allahabad, India Assistant Professor, Department of Electronics and , β€œAnalytical Study Of Capacitance Extraction Of MOSFET,” International Journal of Advanced Research in Computer and Communication Engineering (IJARCCE)

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