Abstract: In this paper, a varied range of adder circuits are designed in which half adder cmos, full adder cmos and RCA cmos are included, are designed using MOSFET in 32nm Technology length. Then, they are simulated using HSPICE and the performance parameters of adders such as average power and delay are determined. A dual mode low power technique is applied on Ripple Carry Adder to reduce power.
Keywords: Adder, Dual-Mode, 32nm.
| DOI: 10.17148/IJARCCE.2018.7542