Abstract— The design of a capacitive RF MEMS switch and its mathematical analysis are presented in this study in order to achieve high isolation, minimal insertion loss, and minimal pull-in voltage. The fact that electrostatically actuated RF MEMS switches outperform state-of-the-art solid-state switches in terms of RF performance is what motivated the current work. RF-MEMS switches with metal contacts can have their hot-switching reliability increased with the use of a shunt protection approach. The RF-MEMS switch is triggered by electrostatic force and operates in a robust manner with a maximum von Mises stress of 13.208 MPa, which is lower than the yield stress of aluminum.

PDF | DOI: 10.17148/IJARCCE.2023.12592

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