Abstract: Full Adder constitutes elementary building block for advanced digital applications. SRAM is a runtime memory unit which performs fast read and write operations. These digital applications dissipate considerable power when synthesized using MOS. FinFET and CNTFET implementations of these circuits have improved power dissipation, delay & scalability characteristics over MOSFET, The HSPICE tool by Synopses designs logical and arithmetic applications and analyse power delay behavior. Library files for coding of FinFET are provided by BSIM & for CNTFET are provided by Stanford Library. Input /Output waveforms have been provided for both applications.
Keywords: FinFET, Nano tubes, CNTFET, SRAM, Full Adders
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DOI:
10.17148/IJARCCE.2020.9212
[1] Malti Bansal, Harsh Saxena, "Comparative Analysis and Behavior of Digital Applications simulated using MOSFET, CNTFET and FinFET Transistors in HSPICE," International Journal of Advanced Research in Computer and Communication Engineering (IJARCCE), DOI: 10.17148/IJARCCE.2020.9212
