International Journal of Advanced Research in Computer and Communication Engineering

A monthly peer-reviewed online and print journal

ISSN Online 2278-1021
ISSN Print 2319-5940

Since 2012

Abstract: Full Adder constitutes elementary building block for advanced digital applications. SRAM  is a runtime memory unit which performs fast read and write operations. These digital applications dissipate considerable power when synthesized using MOS. FinFET and CNTFET implementations of these circuits have improved power dissipation, delay & scalability characteristics over MOSFET, The HSPICE tool by Synopses designs logical and arithmetic applications and analyse power delay behavior. Library files for coding of FinFET are provided by BSIM & for CNTFET are provided by Stanford Library. Input /Output waveforms have been provided for both applications.

Keywords: FinFET, Nano tubes, CNTFET, SRAM, Full Adders


PDF | DOI: 10.17148/IJARCCE.2020.9212

Open chat
Chat with IJARCCE