Abstract: In this paper, a low noise amplifier is designed at 30GHz for millimeter wave applications. The LNA is designed using BSIM4 transistor in complementary metal oxide semiconductor (CMOS) technology. The bandwidth ranges from 28GHz to 30GHz. the LNA design has two stages. A common source topology is designed at both stages which provide highly stable characteristics with high gain and low NF. In the first stage, noise and input matching is improved by using a degenerative inductor. The second stage is designed to achieve flat gain response over a wide bandwidth. The highest gain achieved by the LNA is 39.129dB at 30 GHz. The noise figure is less than 1.1dB over the entire bandwidth. 1 volt of supply voltage has been given. Advanced Design System (ADS) software is used for design of LNA and simulation of results.

Keywords: Advanced Design System, CMOS, Degenerative Inductor, Fifth Generation, Gain, LNA, 30GHz.

PDF | DOI: 10.17148/IJARCCE.2022.111143

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