International Journal of Advanced Research in Computer and Communication Engineering

A monthly peer-reviewed online and print journal

ISSN Online 2278-1021
ISSN Print 2319-5940

Since 2012

Abstract: The purpose of this research work is to describe the modeling of the performance of 2D material such as (WSe2, MoSe2, etc.,) nanowire FETs and to study their performance as parameter of the transistor’s structure variation like diameter, gate dielectric thickness, and gate dielectric constant. Simulations of ballistic transport in the calculation of the current-voltage (I-V) characteristics for nanoscale single gate FETs. FET channel lengths are getting smaller and high-mobility channel materials are being used, near-ballistic models of FET device physics operation is being realized.

Keywords: Nanowire, FET, Semiconductor, Temperature.

PDF | DOI: 10.17148/IJARCCE.2020.91104

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