Abstract: The emergence of new communication standards has put a key challenge for semiconductor industry to develop RF devices that can handle high power and high data rates simultaneously. The RF devices play a key role in the design of power amplifiers (PAs), which is considered as a heart of base station. This paper deals with the optimization of RF- LDMOS transistor and its evaluation in different PA classes, such as linear, switching, wideband applications. For accurate evaluation of RF-LDMOS transistor parameters, some techniques are also developed in technology CAD (TCAD) using large signal time domain computational load-pull (CLP) methods.
The amplifier design was done using a large signal model in ADS software. In 1 dB compression point for the simulated amplifier, 51.8dBm of output power, power added efficiency of 31.89% is achievedin class AB amplifier.
Keywords: AB Amplifier, LDMOS, ADS software
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DOI:
10.17148/IJARCCE.2021.10143
[1] Devendra Kumar, Surendra Kumar, Pritee Verma, Vivek Yadav, "Simulation of 150W S-Band Solid State Power Amplifier," International Journal of Advanced Research in Computer and Communication Engineering (IJARCCE), DOI: 10.17148/IJARCCE.2021.10143
